\ Toshiba Launches Second Generation 650V SiC Schottky Barrier Diodes with Improved Surge Forward Current
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Toshiba Launches Second Generation 650V SiC Schottky Barrier Diodes with Improved Surge Forward Current

January 12, 2017 --

TOKYO--(BUSINESS WIRE)--Toshiba Corporations (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of second generation 650V silicon carbide (SiC) schottky barrier diodes (SBDs) that improve on the surge forward current (IFSM) offered by the companys current products by approximately 70%. Shipments of the new line-up of eight SiC schottky barrier diodes start today.



The new SiC schottky barrier diodes, fabricated with Toshibas second-generation SiC process, deliver approximately 70% better surge forward current than first generation products, and at the same time reduce the switching loss index of ?RON * Qc 1 by around 30%, making them suitable for use in efficient power factor correction (PFC) schemes.

The new products are available in four current ratings of 4A, 6A, 8A, and 10A, either in a non-isolated ?TO-220-2L package or an isolated ?TO-220F-2L package. These products can contribute to improving the efficiency of power supplies in devices including 4K large screen LCD TVs, projectors and multifunction copiers, and in industrial devices such as telecommunication base stations and PC servers.

Line-up and Main Specifications of New SiC Schottky Barrier Diodes:


Package

Characteristics
(Ta=25?)

Absolute Maximum Ratings

Electrical Characteristics

Forward
DC
Current

Non-repetitive
Peak Forward
Surge Current

Power
Dissipation

Forward
Voltage

Anode-cathode
On-resistance ?

Junction
Capacitance

Total
Capacitive
Charge

Symbol IF(DC) IFSM Ptot VF RON Cj QC
Value Max Max Max

Typ.

& Max

Typ. Typ. Typ.
Unit

(A)

(A)

(W) (V)

(m?)

(pF)

(nC)

Test Conditions /
Part Number

?

@ Half-sine Wave

t = 10 ms

?

@ IF(DC)

@ IF(DC) 0.25 to 1.0

@ VR= 1V

@VR= 400V

Non-

Isolation

TRS4E65F 4 39 55.6

1.45

(Typ.)

120 165 10.4
TRS6E65F 6 55 68.2 82 230 15.1
TO-220 -2L TRS8E65F 8 69 83.3 1.6 (Max) 62 300 19.7
TRS10E65F 10 83 107 48 400 24.4
Isolation

TRS4A65F 4 37 33.6

1.45

(Typ.)

120 165 10.4
TRS6A65F 6 52 35.4 82 230 15.1
TO-220F -2L TRS8A65F 8 65 37.5 1.6 (Max) 62 300 19.7
TRS10A65F 10 79 39.7 48 400 24.4

Notes
1 RON: Anode-cathode on-resistance, Qc: Total capacitive charge

Follow the link below for more on Toshiba SiC schottky barrier diodes.
https://toshiba.semicon-storage.com/ap-en/product/diode/sic.html

Customer Inquiries:
Power Device Sales & Marketing Department
Tel: +81-3-3457-3933
https://toshiba.semicon-storage.com/ap-en/contact.html

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

About Toshiba

Toshiba Corporation, a Fortune Global 500 company, channels world-class capabilities in advanced electronic and electrical product and systems into three focus business fields: Energy that sustains everyday life, that is cleaner and safer; Infrastructure that sustains quality of life; and Storage that sustains the advanced information society. Guided by the principles of The Basic Commitment of the Toshiba Group, ?Committed to People, Committed to the Future, Toshiba promotes global operations and is contributing to the realization of a world where generations to come can live better lives.

Founded in Tokyo in 1875, todays Toshiba is at the heart of a global network of 550 consolidated companies employing 188,000 people worldwide, with annual sales surpassing 5.6 trillion yen (US$50 billion). (As of March 31, 2016.)
To find out more about Toshiba, visit www.toshiba.co.jp/index.htm


Contacts

Media Inquiries:
Toshiba Corporation
Storage & Electronic Devices Solutions Company
Digital Marketing Department
Koji Takahata, +81-3-3457-4963
semicon-NR-mailbox@ml.toshiba.co.jp

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